Novel structure and method for metal integration

ABSTRACT

An interconnect structure including a gouging feature at the bottom of one of the via openings and a method of forming the same are provided. In accordance with the present invention, the method of forming the interconnect structure does not disrupt the coverage of the deposited diffusion barrier in the overlying line opening, nor does it introduce damages caused by Ar sputtering into the dielectric material including the via and line openings. In accordance with the present invention, such an interconnect structure contains a diffusion barrier layer only within the via opening, but not in the overlying line opening. This feature enhances both mechanical strength and diffusion property around the via opening areas without decreasing volume fraction of conductor inside the line openings. In accordance with the present invention, such an interconnect structure is achieved by providing the gouging feature in the bottom of the via opening prior to formation of the line opening and deposition of the diffusion barrier in said line opening.

RELATED APPLICATION

This application is a divisional of U.S. patent application Ser. No.11/364,953, filed Mar. 1, 2006.

FIELD OF THE INVENTION

The present invention relates to a semiconductor structure and a methodof fabricating the same. More particularly, the present inventionrelates to an interconnect structure containing a continuous diffusionbarrier within a line opening that is located above a via opening and amethod of fabricating such a semiconductor structure. The continuousdiffusion barrier is formed after providing a gouging feature into aconductive feature that is located beneath the via opening. Because ofthis, no damages are introduced into the dielectric material duringformation of the gouging feature.

BACKGROUND OF THE INVENTION

Generally, semiconductor devices include a plurality of circuits whichform an integrated circuit fabricated on a semiconductor substrate. Acomplex network of signal paths will normally be routed to connect thecircuit elements distributed on the surface of the substrate. Efficientrouting of these signals across the device requires formation ofmultilevel or multilayered schemes, such as, for example, single or dualdamascene wiring structures. Within a typical interconnect structure,metal vias run perpendicular to the semiconductor substrate and metallines run parallel to the semiconductor substrate.

As millions and millions of devices and circuits are squeezed on asemiconductor chip, the wiring density and the number of metal levelsare both increased generation after generation. In order to provide lowRC for high signal speed, low k dielectric materials having a dielectricconstant of less than silicon dioxide as well as copper-containing linesare becoming a necessity. The quality of thin metal wirings and studsformed by a conventional damascene process is extremely important toensure yield and reliability. The major problem encountered in this areatoday is poor mechanical integrity of deep submicron metal studsembedded in low k dielectric materials, which can cause unsatisfiedthermal cycling and stress migration resistance in interconnectstructures. This problem becomes more severe when either newmetallization approaches or porous low k dielectric materials are used.

To solve this weak mechanical strength issue while employing copperdamascene and low k dielectric materials in an interconnect structure, aso called “via punch-through” technique has been adopted by thesemiconductor industry. The via punch-thorough provides a via-gougingfeature (or anchoring area) within the interconnect structure. Such avia-gouging feature is reported to achieve a reasonable contactresistance as well as an increased mechanical strength of the contactstud. These findings have been reported, for example, in M.-Si. Liang“Challenges in Cu/Low k Integration”, IEEE Int. Electron DevicesMeeting, 313 (2004), D. Edelstein et al. “Comprehensive ReliabilityEvaluation of a 90 nm CMOS Technology with Cu/PECVD Low k BEOL”, IEEEInt. Reliability Physics Symp., 316 (2004), and U.S. Pat. Nos. 4,184,909to Chang et al., 5,933,753 to Simon et al., 5,985,762 to Geffken et al.,6,429,519 to Uzoh et al. and 6,784,105 to Yang et al.

However, the argon sputtering technique that is used to create viagouging in the prior art not only removes the deposited liner material,e.g., TaN, from the trench (i.e., line opening) bottom, but also damagesthe low k dielectric material. Because of the requirement of creatingthe gouging feature, the final interconnect structure not only has poorliner coverage at the trench bottom, but severe damage has beenintroduced into the low k dielectric material from the Ar sputteringprocess. This becomes a major yield detractor and a reliability concernfor advanced chip manufacturing.

The detailed processing steps of the existing prior art approach for viagouging are illustrated in FIGS. 1A-1E and are described herein below.Reference is first made to FIG. 1A which illustrates a prior artstructure that is formed after dual damascene patterning of an upperinterconnect level 108 which is located atop a lower interconnect level100. The lower interconnect level 100 includes a first low k dielectricmaterial 102 which includes a metallic, Cu, feature 104 therein. Thelower interconnect level 100 is separated in part from the upperinterconnect level 108 by a capping layer 106. The upper interconnectlevel 108 includes a second low k dielectric material 110 that includesboth line 112 and via 114 openings located therein. A surface of themetallic feature 104 of the lower interconnect level 100 that is beneaththe via opening 114 is exposed as is shown in FIG. 1A.

FIG. 1B shows the prior art structure of FIG. 1A after forming adiffusion barrier, e.g., TaN, 116 over all of the exposed surfaces.Argon sputtering, such as is shown in FIG. 1C, is then performed toclean the bottom horizontal surface within the via opening 114 and forma gouging feature (i.e., anchoring area) 118 into the metallic feature104 of the lower interconnect level 100. The gouging feature 118 isemployed to enhance the interconnect strength between the variousinterconnect levels shown. During the Ar sputtering process, thediffusion barrier 116 is removed from the bottom of each of the lineopenings 112, and dielectric damages 120 (which are indicated by circlesin the second low k dielectric material 110) are formed at the bottom ofeach of the line openings 112. The dielectric damages 120 formed duringthe sputtering process are due to the inherent aggressive nature ofprior art sputtering processes.

FIG. 1D shows the prior art structure of FIG. 1C after forming a metalliner layer, e.g., Ta, Ru, Ir, Rh or Pt, 122 on the exposed surfacesthereof. FIG. 1E illustrates the prior art structure after filling theline and via openings (112 and 114, respectively) with a conductivemetal, e.g., Cu, 124 and planarization. As shown in FIG. 1E, the priorart structure has poor diffusion barrier 116 coverage (designated byreference numeral 126) at the bottom of the metallic filled lines and afeature-bottom roughness which is a result of the damages 120 formedinto the second low k dielectric material 110. Both of thesecharacteristics reduce the quality of the diffusion barrier 116 anddegrade the overall wiring reliability. Moreover, both of theaforementioned characteristics result in the structure exhibiting ahigh-level of metal-to-metal leakage.

Porous ultra-low k dielectric materials (having a dielectric constant ofabout 2.8 or less) have been developed and have been used ininterconnect structures as one of the interlevel dielectrics. Ascompared to dense (i.e., non-porous) low k dielectrics, the damageimpact of argon sputtering is much higher on most ultra-low k dielectricmaterials tested, which makes integration of the current metallizationapproach (See FIGS. 1A-1E, for example) with ultra-low k dielectricmaterials nearly impossible. As a result, all of the current ultra-low khardware has failed during barrier integrity testing. A scanningelectron micrograph (SEM) cross sectional of a prior art interconnectstructure with Cu interconnects in an ultra-low k dielectric is shown inFIG. 2. The arrows included in the SEM image point to the damages formedinto the ultra-low k dielectric material during Ar sputtering.

In view of the above drawbacks with prior art interconnect structures,and particularly in those including a porous ultra-low k dielectric asone of the interlevel dielectric materials, there is a continued needfor developing a new and improved integration scheme that avoids removalof the diffusion barrier from the horizontal surfaces of the lineopenings formed into a dielectric material (including low k andultra-low k) and thereby not introducing damages into the dielectricmaterial.

SUMMARY OF THE INVENTION

The present invention provides an interconnect structure including agouging feature at the bottom of the via openings and a method offorming the same, which does not disrupt the coverage of the depositeddiffusion barrier in the overlying line opening, nor does the inventivemethod introduce damages caused by Ar sputtering into the dielectricmaterial that includes the via and line openings. In accordance with thepresent invention, such an interconnect structure is achieved byproviding the gouging feature in the bottom of the via opening prior toformation of the line opening and deposition of the diffusion barrier insaid line opening.

Since diffusion barrier coverage is continuous in the line regions ofthe inventive interconnect structure and no damages are introduced intothe interconnect dielectric material, the inventive interconnectstructure has an improved wiring reliability and a lower-level ofmetal-to-metal leakage than the prior interconnect structure which isfabricated utilizing the processing flow shown in FIGS. 1A-1E.

In one embodiment of the present invention, the invention provides asemiconductor structure that comprises:

a lower interconnect level including a first dielectric material havingat least one conductive feature embedded therein;a dielectric capping layer located on said first dielectric material andsome, but not all, portions of the at least one conductive feature; andan upper interconnect level including a second dielectric materialhaving at least one conductively filled via and an overlyingconductively filled line disposed therein, wherein said conductivelyfilled via is in contact with an exposed surface of the at least oneconductive feature of said first interconnect level by an anchoringarea,said conductively filled via is separated from said second dielectricmaterial by a first diffusion barrier layer, andsaid conductively filled line is separated from said second dielectricmaterial by a second continuous diffusion barrier layer thereby thesecond dielectric material includes no damaged regions in areas adjacentto said conductively filled line.

In a preferred embodiment of the present invention, the interconnectstructure includes vias and lines that are filled with Cu or aCu-containing alloy, and the first and second dielectric materials arethe same or different porous dielectric materials having a dielectricconstant of about 2.8 or less.

In yet another embodiment of the present invention, the presentinvention provides a semiconductor structure comprising:

a lower interconnect level including a first dielectric material havingat least one conductive feature embedded therein;a dielectric capping layer located on said first dielectric material andsome, but not all, portions of the at least one conductive feature; andan upper interconnect level including a second dielectric materialhaving at least one conductively filled via and an overlyingconductively filled line disposed therein, wherein said conductivelyfilled via is in contact with said at least one conductive feature insaid at least one first interconnect level by an anchoring area,a metallic interfacial layer located at a surface of said anchoring areaand is in contact with said conductively filled via,said conductively filled via is separated from said second dielectricmaterial by a first diffusion barrier layer, andsaid conductively filled line is separated from said second dielectricmaterial by a second continuous diffusion barrier layer thereby thesecond dielectric material includes no damaged regions in areas adjacentto said conductively filled line.

In addition to providing the aforementioned semiconductor structures,the present invention also provides a method of fabricating the same. Inone embodiment of the present invention, the method includes:

providing an initial interconnect structure that includes a lowerinterconnect level comprising a first dielectric layer having at leastone conductive feature embedded therein, an upper interconnect levelcomprising a second dielectric having at least one via opening thatexposes a portion of said at least one conductive feature located atopsaid lower interconnect level, said lower and upper interconnect levelsare separated in part by a dielectric capping layer, and a patternedhard mask on a surface of the said upper interconnect level;forming a first barrier layer on all exposed surfaces of the initialinterconnect structure;forming a punch-through gouging feature in said at least one conductivefeature that is located at the bottom of said via opening;forming at least one line opening in said second dielectric materialthat extends above said at least one via opening;forming a second continuous diffusion barrier layer at least within saidat least one line opening;forming an adhesion/plating seed layer within both said at least oneline opening and said at least one via opening; andfilling said at least one line opening and at least one via opening witha conductive material.

In a preferred embodiment of the present invention, the method of thepresent invention includes filling the vias and lines with Cu or aCu-containing alloy, and using a porous dielectric material having adielectric constant of about 2.8 or less as both the first and seconddielectric.

In yet another embodiment of the present invention, the method includesthe steps of:

providing an initial interconnect structure that includes a lowerinterconnect level comprising a first dielectric layer having at leastone conductive feature embedded therein, an upper interconnect levelcomprising a second dielectric having at least one via opening thatexposes a portion of said at least one conductive feature located atopsaid lower interconnect level, said lower and upper interconnect levelsare separated in part by a dielectric capping layer, and a patternedhard mask on a surface of the said upper interconnect level;forming a first barrier layer on all exposed surfaces of the initialinterconnect structure;forming a punch-through gouging feature in said at least one conductivefeature that is located at the bottom of said via opening;forming a metallic interfacial layer atop said gouging feature;forming at least one line opening in said second dielectric materialthat extends above said at least one via opening;removing etching residues from said at least one line opening and fromsaid at least one via opening;forming a second continuous diffusion barrier layer at least within saidat least one line opening;forming an adhesion/plating seed layer within both said at least oneline opening and said at least one via opening; andfilling said at least one line opening and at least one via opening witha conductive material.

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1A-1E are pictorial representations (through cross sectionalviews) illustrating the basic processing steps used in the prior art informing an interconnect structure.

FIG. 2 is a SEM image (through a cross sectional view) illustrating aprior art interconnect structure with Cu interconnects in an ultra-low kdielectric.

FIG. 3 is a pictorial representation (through a cross sectional view)illustrating an initial structure of the present invention after forminga via contact opening (herein after via opening) with an upperinterconnect level.

FIG. 4 is a pictorial representation (through a cross sectional view)illustrating the structure of FIG. 3 after forming a first diffusionbarrier at least within the via opening.

FIG. 5A is a pictorial representation (through a cross sectional view)illustrating the structure of FIG. 4 after sputtering to remove thefirst diffusion barrier from the bottom of the via contact opening andpunching through into an underlying conductive feature forming a gougingfeature therein; FIG. 5B shows an optional embodiment of the presentinvention in which a metallic interfacial layer is provided to thestructure shown in FIG. 5A.

FIG. 6 is a pictorial representation (through a cross sectional view)illustrating the structure of FIG. 5A after formation of a planarizationlayer, hard mask and patterned photoresist.

FIG. 7 is a pictorial representation (through a cross sectional view)illustrating the structure of FIG. 6 after creating at least one lineopening within the upper interconnect level.

FIG. 8 is a pictorial representation (through a cross sectional view)illustrating the structure of FIG. 7 after removing remainingplanarization material that protected the via opening during formationof the line opening. Possible residues are shown as being present in thevia bottom.

FIG. 9 is a pictorial representation (through a cross sectional view)illustrating the structure of FIG. 8 after removing the via bottomoxides/residues.

FIGS. 10A-10B are pictorial representations (through cross sectionalviews) illustrating structures of FIG. 9 that are formed after formationof a second diffusion barrier.

FIGS. 11A-11B are pictorial representations (through cross sectionalviews) illustrating structures of FIGS. 10A and 10B, respectively thatare formed after formation of an adhesion/plating seed layer.

FIGS. 12A-12B are pictorial representations (through cross sectionalviews) illustrating structures of FIGS. 11A and 11B, respectively thatare formed after metallic fill and planarization.

DETAILED DESCRIPTION OF THE INVENTION

The present invention, which provides an interconnect structureincluding a gouged via feature (i.e., anchored via bottom) and a methodof fabricating the same, will now be described in greater detail byreferring to the following discussion and drawings that accompany thepresent application. The drawings of the present application, which arereferred to herein below in greater detail, are provided forillustrative purposes and, as such, they are not drawn to scale.

The process flow of the present invention begins with providing theinitial interconnect structure 10 shown in FIG. 3. Specifically, theinitial interconnect structure 10 shown in FIG. 3 comprises a multilevelinterconnect including a lower interconnect level 12 and an upperinterconnect level 16 that are separated in part by a dielectric cappinglayer 14. The lower interconnect level 12, which may be located above asemiconductor substrate (not shown) including one or more semiconductordevices, comprises a first dielectric material 18 having at least oneconductive feature (i.e., a conductive region) 20 that is separated fromthe first dielectric layer 18 by a barrier layer (not shown). The upperinterconnect level 16 comprises a second dielectric material 24 that hasat least one via opening 26 located therein. As is shown, the at leastone via opening 26 exposes a portion of the conductive feature 20. Atopthe upper interconnect level 16 is a patterned hard mask 28. Althoughthe structure shown in FIG. 3 illustrates a single via opening 26, thepresent invention contemplates forming any number of such via openingsin the second dielectric material 24 which exposes other conductivefeatures 20 that may be present in the first dielectric material 18.

The initial structure 10 shown in FIG. 3 is made utilizing conventionaltechniques well known to those skilled in the art. For example, theinitial interconnect structure can be formed by first applying the firstdielectric material 18 to a surface of a substrate (not shown). Thesubstrate, which is not shown, may comprise a semiconducting material,an insulating material, a conductive material or any combinationthereof. When the substrate is comprised of a semiconducting material,any semiconductor such as Si, SiGe, SiGeC, SiC, Ge alloys, GaAs, InAs,InP and other III/V or II/VI compound semiconductors may be used. Inaddition to these listed types of semiconducting materials, the presentinvention also contemplates cases in which the semiconductor substrateis a layered semiconductor such as, for example, Si/SiGe, Si/SiC,silicon-on-insulators (SOIs) or silicon germanium-on-insulators (SGOIs).

When the substrate is an insulating material, the insulating materialcan be an organic insulator, an inorganic insulator or a combinationthereof including multilayers. When the substrate is a conductingmaterial, the substrate may include, for example, polySi, an elementalmetal, alloys of elemental metals, a metal silicide, a metal nitride orcombinations thereof including multilayers. When the substrate comprisesa semiconducting material, one or more semiconductor devices such as,for example, complementary metal oxide semiconductor (CMOS) devices canbe fabricated thereon.

The first dielectric material 18 of the lower interconnect level 12 maycomprise any interlevel or intralevel dielectric including inorganicdielectrics or organic dielectrics. The first dielectric material 18 maybe porous or non-porous, with porous dielectrics having a dielectricconstant of about 2.8 or less being highly preferred in some embodimentsof the present invention. Some examples of suitable dielectrics that canbe used as the first dielectric material 18 include, but are not limitedto: SiO₂, silsesquioxanes, C doped oxides (i.e., organosilicates) thatinclude atoms of Si, C, O and H, thermosetting polyarylene ethers, ormultilayers thereof. The term “polyarylene” is used in this applicationto denote aryl moieties or inertly substituted aryl moieties which arelinked together by bonds, fused rings, or inert linking groups such as,for example, oxygen, sulfur, sulfone, sulfoxide, carbonyl and the like.

The first dielectric material 18 typically has a dielectric constantthat is about 4.0 or less, with a dielectric constant of about 2.8 orless being even more typical. These dielectrics generally have a lowerparasitic crosstalk as compared with dielectric materials that have ahigher dielectric constant than 4.0. The thickness of the firstdielectric material 18 may vary depending upon the dielectric materialused as well as the exact number of dielectrics within the lowerinterconnect level 12. Typically, and for normal interconnectstructures, the first dielectric material 18 has a thickness from about200 to about 450 nm.

The lower interconnect level 12 also has at least one conductive feature20 that is embedded in (i.e., located within) the first dielectricmaterial 18. The conductive feature 20 comprises a conductive materialthat is separated from the first dielectric material 18 by a barrierlayer (not shown). The conductive feature 20 is formed by lithography(i.e., applying a photoresist to the surface of the first dielectricmaterial 18, exposing the photoresist to a desired pattern of radiation,and developing the exposed resist utilizing a conventional resistdeveloper), etching (dry etching or wet etching) an opening in the firstdielectric material 18 and filling the etched region with the barrierlayer and then with a conductive material forming the conductive region.The barrier layer, which may comprise Ta, TaN, Ti, TiN, Ru, RuN, W, WNor any other material that can serve as a barrier to prevent conductivematerial from diffusing there through, is formed by a deposition processsuch as, for example, atomic layer deposition (ALD), chemical vapordeposition (CVD), plasma enhanced chemical vapor deposition (PECVD),physical vapor deposition (PVD), sputtering, chemical solutiondeposition, or plating.

The thickness of the barrier layer may vary depending on the exact meansof the deposition process as well as the material employed. Typically,the barrier layer has a thickness from about 4 to about 40 nm, with athickness from about 7 to about 20 nm being more typical.

Following the barrier layer formation, the remaining region of theopening within the first dielectric material 18 is filled with aconductive material forming the conductive feature 20. The conductivematerial used in forming the conductive feature 20 includes, forexample, polySi, a conductive metal, an alloy comprising at least oneconductive metal, a conductive metal silicide or combinations thereof.Preferably, the conductive material that is used in forming theconductive feature 20 is a conductive metal such as Cu, W or Al, with Cuor a Cu alloy (such as AlCu) being highly preferred in the presentinvention. The conductive material is filled into the remaining openingin the first dielectric material 18 utilizing a conventional depositionprocess including, but not limited to: CVD, PECVD, sputtering, chemicalsolution deposition or plating. After deposition, a conventionalplanarization process such as, for example, chemical mechanicalpolishing (CMP) can be used to provide a structure in which the barrierlayer and the conductive feature 20 each have an upper surface that issubstantially coplanar with the upper surface of the first dielectricmaterial 18.

After forming the at least one conductive feature 20, a blanketdielectric capping layer 14 is formed on the surface of the lowerinterconnect level 12 utilizing a conventional deposition process suchas, for example, CVD, PECVD, chemical solution deposition, orevaporation. The dielectric capping layer 14 comprises any suitabledielectric capping material such as, for example, SiC, Si₄NH₃, SiO₂, acarbon doped oxide, a nitrogen and hydrogen doped silicon carbideSiC(N,H) or multilayers thereof. The thickness of the capping layer 14may vary depending on the technique used to form the same as well as thematerial make-up of the layer. Typically, the capping layer 14 has athickness from about 15 to about 55 nm, with a thickness from about 25to about 45 nm being more typical.

Next, the upper interconnect level 16 is formed by applying the seconddielectric material 24 to the upper exposed surface of the capping layer14. The second dielectric material 24 may comprise the same ordifferent, preferably the same, dielectric material as that of the firstdielectric material 18 of the lower interconnect level 12. Theprocessing techniques and thickness ranges for the first dielectricmaterial 18 are also applicable here for the second dielectric material24. The second dielectric material 24 can also comprise two differentmaterials, i.e., deposition of one dielectric material first, followedby deposition of a different dielectric material. In one embodiment ofthe present invention, the second dielectric material 24 comprises twodifferent low k dielectric materials and thus the upper interconnectlevel 16 has a hybrid structure with the subsequently filledconductively filled line embedded in a porous dielectric material, andthe subsequently filled via embedded in a dense (i.e., non porous)dielectric material. In such an embodiment, the porous low k dielectrichas a dielectric constant of about 2.8 or less, and the dense porous lowk dielectric has a dielectric constant of about 4.0 or less.

Next, at least one via opening 26 is formed into the second dielectricmaterial 24 by first forming a blanket hard mask material atop the uppersurface of the second dielectric material 24. The blanket hard maskmaterial includes an oxide, nitride, oxynitride or any combinationincluding multilayers thereof. Typically, the hard mask material is anoxide such as SiO₂ or a nitride such as Si₃N₄. The blanket hard maskmaterial is formed utilizing a conventional deposition process such as,for example, CVD, PECVD, chemical solution deposition or evaporation.The thickness of the as-deposited hard mask material may vary dependingupon the type of hard mask material formed, the number of layers thatmake up the hard mask material and the deposition technique used informing the same. Typically, the as-deposited hard mask material has athickness from about 10 to about 80 nm, with a thickness from about 20to about 60 nm being even more typical.

After forming the blanket layer of hard mask material, a photoresist(not shown) is formed atop the hard mask material utilizing aconventional deposition process such as, for example, CVD, PECVD,spin-on coating, chemical solution deposition or evaporation. Thephotoresist may be a positive-tone material, a negative-tone material ora hybrid material, each of which is well known to those skilled in theart. The photoresist is then subjected to a lithographic process whichincludes exposing the photoresist to a pattern of radiation anddeveloping the exposed resist utilizing a conventional resist developer.The lithographic step provides a patterned photoresist atop the hardmask material that defines the width of the via opening 26.

After providing the patterned photoresist, the via pattern istransferred into the hard mask material and then subsequently into thesecond dielectric material 24 utilizing one or more etching process. Thepatterned photoresist can be stripped immediately after the via patternis transferred into the hard mask forming patterned hard mask 28utilizing a conventional stripping process. Alternatively, the patternedphotoresist can be stripping after the via pattern is transferred intothe second dielectric material 24. The etching used in transferring thevia pattern may comprise a dry etching process, a wet chemical etchingprocess or a combination thereof. The term “dry etching” is used hereinto denote an etching technique such as reactive-ion etching, ion beametching, plasma etching or laser ablation.

After forming the initial interconnect structure 10 shown in FIG. 3, alayer of diffusion barrier material (which, for the purposes of theclaimed invention, relates to a first diffusion barrier layer) 30 isthen formed over all of the exposed surfaces of the initial interconnectstructure providing the structure shown, for example, in FIG. 4. As isshown, diffusion barrier material 30 covers the exposed surfaces of thepatterned hard mask 28, the sidewalls of the second dielectric material24 within the via opening 26 as well as the exposed portion of theconductive feature 20. In accordance with the present invention, thediffusion barrier material 30 is a thin layer whose thickness istypically within the range from about 0.5 to about 20 nm, with athickness from about 1 to about 10 nm being even more typical. The layerof diffusion barrier material 30 is formed utilizing a conventionaldeposition process including, but not limited to: CVD, PVD, ALD orspin-on coating. The diffusion barrier material 30 comprises ametal-containing material such as, for example, TaN, Ta, Ti, TiN, RuTa,RuTaN, W, Ru or Ir, an insulator such as, for example, SiO₂, Si₃N₄, SiC,SiC(N,H) or any combination thereof.

Following the formation of the diffusion barrier material 30, thestructure shown in FIG. 4 is then subjected to an Ar sputtering processwhich removes the diffusion barrier material 30 from the bottom of thevia and punches through the underlying conductive feature 20 so as tocreate a gouging feature (or anchoring area) 32 within the conductivefeature 20. The resultant structure during the Ar sputtering process isshown, for example, in FIG. 5A. It is observed that this sputteringprocess also removes diffusion barrier material 30 that is located onthe horizontal surfaces of the hard mask 28. The second dielectricmaterial 24 is not damaged during this process since it is protected bythe hard mask 28. The Ar sputtering process utilized in forming thegouging feature 32 comprises any conventional Ar sputtering process thatis typically used in interconnect technology to form such a feature. Byway of illustration, Ar sputtering can be performed utilizing thefollowing non-limiting conditions: gas flow of 20 sccm Ar, temperatureof 25° C., bias of top electrode of 400 KHz and 750 W, table bias of13.6 MHz and 400 W, and a process pressure of 0.6 mtorr. While Ar isshown for purpose of illustration, any other gas such as He, Ne, Xe, N₂,H₂, NH₃, N₂H₂, or mixtures thereof, can also be used for the sputteringprocess.

FIG. 5B shows an optional embodiment of the present invention in which ametallic interfacial layer 34 is formed on all the exposed surfacesshown in FIG. 5A. The metallic interfacial layer 34 is formed utilizingany conventional deposition process including, for example, CVD, PECVD,chemical solution deposition, evaporation, metalorgano deposition, ALD,sputtering, PVP or plating (electroless or electro). The thickness ofthe metallic interfacial layer 34 may vary depending on the exactmetallic interfacial material used as well as the deposition techniquethat was used in forming the same. Typically, the metallic interfaciallayer 34 has a thickness from about 0.5 to about 40 nm, with a thicknessfrom about 1 to about 10 nm being even more typical. The metallicinterfacial layer 34 comprises a metallic barrier material such as, forexample, Co, TaN, Ta, Ti, TiN, Ru, Ir, Au, Rh, Pt, Pd or Ag. Alloys ofsuch materials are also contemplated.

Next, a planarization layer 36 is deposited filling the via opening 26of either the structure shown in FIGS. 5A and 5B. The planarizationlayer 36 is deposited utilizing a conventional deposition processincluding, for example, CVD, PECVD, spin-on coating, evaporation orchemical solution deposition. The planarization material includes aconventional antireflective coating material or a spun-glass material.As shown in FIG. 6, the planarization layer 36 completes fills the viaopening 26 as well as extending above the via opening 26 on either theexposed surface of the hard mask 28 (as shown in FIG. 6) or atop themetallic interfacial layer 34 (not shown).

In addition to the planarization layer 36, the structure shown in FIG. 6also includes a second hard mask 38 disposed on a surface of theplanarization layer 36 and a patterned photoresist 40 disposed on asurface of the second hard mask 38. The second hard mask 38 is formedutilizing the same processing techniques as described in forming thehard mask 28 and it is comprised of one of the hard mask materialsmentioned above in connection with the hard mask 28. The patternedphotoresist 40 is formed by deposition and lithography and it containsopenings that have the width of a line opening.

The structure shown in FIG. 6 is then subjecting to one or more etchingprocesses which are capable of forming the structure shown in FIG. 7. Asshown in this figure, the one or more etching processes form lineopenings 42 in the second dielectric material 24. In accordance with thepresent invention, at least one of the line openings 42 is located aboveand connect to the via opening 26, which is protected by the remainingplanarization layer 36. The one or more etching steps remove, insequential order, exposed portions of the second hard mask 38, theunderlying portions of the planarization layer 36, and exposed portionsof the second dielectric material 24. The patterned photoresist 40 andthe patterned second hard mask 38 are typically consumed during thementioned etching steps.

FIG. 8 shows the structure of FIG. 7 after the remaining planarizationlayer 36 has been stripped from within the via opening 26. The strippingof the remaining planarization layer 36 is performed utilizing either achemical wet etching process or a chemical ashing process that isselective in removing the planarizing material from the structure. Insome embodiments of the present invention, oxide or etch residue 44 mayremain in the gouging feature 32.

In such instances, the oxide or etch residue 44 can be removed from thegouging feature 32 utilizing a surface cleaning process that may includea wet chemical etching process and/or a slight Ar bombardment. No damageoccurs in this instance since the Ar bombardment conditions are not asharsh as that used in the prior art in forming the gouging feature 32.Typically, the process time used in the present case for only surfacecleaning is less than 5 seconds compared to longer than 10 seconds forcreating the gouging feature used in the prior art. By way ofillustration, Ar sputtering can be performed utilizing the followingnon-limiting conditions: gas flow of 20 sccm Ar, temperature of 25° C.,bias of top electrode of 400 KHz and 400 W, table bias of 13.6 MHz and200 W, and a process pressure of 0.6 mtorr. While Ar is shown forpurpose of illustration, any other gas such as He, Ne, Xe, N₂, H₂, NH₃,N₂H₂ or mixtures thereof, can also be used for the sputtering process.

In some embodiments of the present invention, etching residues areremoved from the at least one line opening and from the at least one viaopening area. In one embodiment, plasma etching, which contains at leastone or combination of O₂, H₂, N₂, CO, CO₂, or NH₃ is employed. Inanother embodiment, the etching residues are removed by a wet clean,which contains at least one or combination of HF, HCl, H₂SO₄, or HNO₃.FIG. 9 shows the resultant structure after performing such a cleaningprocess.

FIGS. 10A and 10B shows two different structures that can be formednext. Both of the structures shown in FIGS. 10A and 10B include adiffusion barrier 46 (for the purposes of the claimed invention, thediffusion barrier 46 represents a second diffusion barrier). As shown inFIG. 10A, the diffusion barrier 46 only covers the exposed surfaceswithin the line openings 42, while in FIG. 10B the diffusion barrier 46covers the exposed surfaces within both the line openings 42 and the viaopenings 26. The extent of the diffusion barrier 46 coverage isdetermined by the conditions and length of the deposition process usedin forming the same. It is noted that the diffusion barrier 46 iscontinuously present in the line openings 42 throughout the inventiveprocess.

In accordance with the present invention, the diffusion barrier 46comprises Ta, TaN, Ti, TiN, Ru, RuN, RuTa, RuTaN, W, WN or any othermaterial that can serve as a barrier to prevent a conductive materialfrom diffusing there through. Combinations of these materials are alsocontemplated forming a multilayered stacked diffusion barrier. Thediffusion barrier 46 is formed utilizing a deposition process such as,for example, atomic layer deposition (ALD), chemical vapor deposition(CVD), plasma enhanced chemical vapor deposition (PECVD), physical vapordeposition (PVD), sputtering, chemical solution deposition, or plating.

The thickness of the diffusion barrier 46 may vary depending on thenumber of material layers within the barrier, the technique used informing the same as well as the material of the diffusion barrieritself. Typically, the diffusion barrier 46 has a thickness from about 4to about 40 nm n, with a thickness from about 7 to about 20 nm beingeven more typical.

FIGS. 11A and 11B shows two different structures that can be formed nextfrom the structures shown in FIGS. 10A and 1013, respectively. Both ofthe structures shown in FIGS. 11A and 11B include an adhesion/platingseed layer 48.

The adhesion/plating seed layer 48 is comprised of a metal or metalalloy from Group VIIIA of the Periodic Table of Elements. Examples ofsuitable Group VIIIA elements for the adhesion/plating seed layerinclude, but are not limited to: Ru, TaRu, Ir, Rh, Pt, Pd and alloysthereof. In some embodiments, it is preferred to use Ru, Ir or Rh aslayer 48.

The adhesion/plating seed layer 48 is formed by a conventionaldeposition process including, for example, chemical vapor deposition(CVD), plasma enhanced chemical vapor deposition (PECYD), atomic layerdeposition (ALD), plating, sputtering and physical vapor deposition(PVP). The thickness of the adhesion/plating seed layer 48 may varydepending on number of factors including, for example, the compositionalmaterial of the adhesion/plating seed layer 48 and the technique thatwas used in forming the same. Typically, the adhesion/plating seed layer48 has a thickness from about 0.5 to about 10 nm, with a thickness ofless than 6 nm being even more typical.

FIGS. 12A and 12B shows different interconnect structures that can beformed from the structures shown in FIGS. 11A and 11B, respectively.Each of the illustrated structures shown in FIGS. 12A and 1213 is afterfilling the via and line openings as well as the gouging feature 32 withan interconnect conductive material 50 and planarization. Theinterconnect conductive material 50 may comprise the same or different,preferably the same, conductive material (with the proviso that theconductive material is not polysilicon) as that of the conductivefeature 20. Preferably, Cu, Al, W or alloys thereof are used, with Cu orAlCu being most preferred. The conductive material 50 is formedutilizing the same deposition processing as described above in formingthe conductive feature 20 and following deposition of the conductivematerial, the structure is subjected to planarization. The planarizationprocess removes various materials that are located atop the second low kdielectric material 24 of the upper interconnect level 16.

The method of the present application is applicable in formingadditional interconnect levels atop the levels depicted in FIGS. 3-12B.Each of the various interconnect levels would include the gougingfeature described hereinabove.

Because of the integration processing scheme described above, no damagedregions are formed into the second dielectric material 24 during theformation of the gouging feature 32. Moreover, the inventive integrationprocess allows for continuous coverage of the diffusion barrier 46 inthe metallic line regions which has a uniform thickness (i.e., athickness variation of less than 2 nm). Since diffusion barrier 46coverage is continuous in the line regions of the inventive interconnectstructure and no damages are introduced into the interconnect dielectricmaterial, the inventive interconnect structure has an improved wiringreliability and a lower-level of metal-metal leakage than theinterconnect structure shown in FIGS. 1A-1E. It should be also notedthat diffusion barrier material 30 is only present inside the viaopenings 26, but is not present in the line openings 42. This featureenhances both mechanical strength and diffusion property around the viaopening areas without decreasing volume fraction of conductor 50 insidethe line openings 42. It is further noted that in some embodiments thetotal diffusion barrier thickness of the first diffusion barrier layer30 and the second continuous diffusion barrier 46 within theconductively filled via is thicker than the second continuous diffusionbarrier 46 within the conductively filled line.

While the present invention has been particularly shown and describedwith respect to preferred embodiments thereof it will be understood bythose skilled in the art that the foregoing and other changes in formsand details may be made without departing from the spirit and scope ofthe present invention. It is therefore intended that the presentinvention not be limited to the exact forms and details described andillustrated, but fall within the scope of the appended claims.

1. A semiconductor structure comprising: a lower interconnect levelincluding a first dielectric material having at least one conductivefeature embedded therein; a dielectric capping layer located on saidfirst dielectric material and some, but not all, portions of the atleast one conductive feature; and an upper interconnect level includinga second dielectric material having at least one conductively filled viaand an overlying conductively filled line disposed therein, wherein saidconductively filled via is in contact with an exposed surface of the atleast one conductive feature of said first interconnect level by ananchoring area, said conductively filled via is separated from saidsecond dielectric material by a first diffusion barrier layer, and saidconductively filled line is separated from said second dielectricmaterial by a second continuous diffusion barrier layer thereby thesecond dielectric material includes no damaged regions in areas adjacentto said conductively filled line.
 2. The semiconductor structure ofclaim 1 wherein said first and second dielectric materials comprise thesame or different dense low k dielectric having a dielectric constant ofabout 4.0 or less.
 3. The semiconductor structure of claim 1 whereinsaid first and second dielectric materials comprise the same ordifferent porous low k dielectric having a dielectric constant of about2.8 or less.
 4. The semiconductor structure of claim 1 wherein saidsecond dielectric material comprises two different low k dielectricmaterials and said upper interconnect level has a hybrid structure withsaid conductively filled line embedded in a porous dielectric material,and said conductively filled via embedded in a dense dielectricmaterial.
 5. The semiconductor structure of claim 4 wherein said porouslow k dielectric having a dielectric constant of about 2.8 or less, andsaid dense porous low k dielectric having a dielectric constant of about4.0 or less.
 6. The semiconductor structure of claim 1 wherein saiddielectric capping layer comprises one of SiC, Si₄NH₃, SiO₂, a carbondoped oxide, a nitrogen and hydrogen doped silicon carbide SiC(N,H) ormultilayers thereof.
 7. The semiconductor structure of claim 1 whereinsaid at least one conductive feature embedded within said firstdielectric material includes Cu or a Cu-containing alloy.
 8. Thesemiconductor structure of claim 1 wherein said at least oneconductively filled via and said at least one overlying conductivelyfilled line comprise Cu or a Cu-containing alloy.
 9. The semiconductorstructure of claim 1 wherein said first diffusion barrier layercomprises a metal-containing material such as, TaN, Ta, Ti, TiN, RuTa,RuTaN, W, WN, Ru or Ir, an insulator such as, for example, SiO₂, Si₃N₄,SiC, SiC(N,H) or any combination thereof.
 10. The semiconductorstructure of claim 1 wherein said first diffusion barrier layer onlyexists in the at least one conductively filled via, not in the at leastone overlying conductively filled line.
 11. The semiconductor structureof claim 1 wherein said second continuous diffusion barrier layercomprises Ta, TaN, Ti, TiN, Ru, RuN, RuTa, RuTaN, W or WN.
 12. Thesemiconductor structure of claim 1 wherein said second continuousdiffusion barrier layer is absent from said conductively filled via, yetsaid conductively filled via is separated from said second dielectricmaterial by said first diffusion barrier layer.
 13. The semiconductorstructure of claim 1 wherein said second continuous diffusion barrier isalso present in said conductively filled via atop said first diffusionbarrier layer.
 14. The semiconductor structure of claim 1 wherein thetotal diffusion barrier thickness of said first diffusion barrier layerand said second continuous diffusion barrier layer within saidconductively filled via is thicker than said second continuous diffusionbarrier layer thickness within said conductively filled line.
 15. Thesemiconductor structure of claim 1 further comprising anadhesion/plating seed layer located on said second continuous diffusionbarrier layer in said at least one conductively filled line, and locatedon said first diffusion barrier layer in said at least one conductivelyfilled via.
 16. The semiconductor structure of claim 1 furthercomprising an adhesion/plating seed layer located on said secondcontinuous diffusion barrier layer in said at least one conductivelyfilled line, and located on said second diffusion barrier layer in saidat least one conductively filled via.
 17. The semiconductor structure ofclaim 15 wherein said adhesion/plating seed layer comprises one orcombination of Ru, TaRu, Ir, Rh, Pt, Pd, Ta, Cu or alloys thereof. 18.The semiconductor structure of claim 1 further comprising a metallicinterfacial layer within said anchoring area.
 19. The semiconductorstructure of claim 18 wherein said metallic interfacial layer comprisesCo, TaN, Ta, Ti, TiN, Ru, Ir, Au, Rh, Pt, Pd, Ag or alloys thereof. 20.A semiconductor structure comprising: a lower interconnect levelincluding a first dielectric material having at least one conductivefeature embedded therein; a dielectric capping layer located on saidfirst dielectric material and some, but not all, portions of the atleast one conductive feature; and an upper interconnect level includinga second dielectric material having at least one conductively filled viaand an overlying conductively filled line disposed therein, wherein saidconductively filled via is in contact with said at least one conductivefeature in said at least one first interconnect level by an anchoringarea, a metallic interfacial layer located at a surface of saidanchoring area and is in contact with said conductively filled via, saidconductively filled via is separated from said second dielectricmaterial by a first diffusion barrier layer, and said conductivelyfilled line is separated from said second dielectric material by asecond continuous diffusion barrier layer thereby the second dielectricmaterial includes no damaged regions in areas adjacent to saidconductively filled line.
 21. The semiconductor structure of claim 20wherein said metallic interfacial layer comprises one or combination ofCo, TaN, Ta, Ti, TiN, Ru, Ir, Au, Rh, Pt, Pd, Ag or alloys thereof.